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AOTS40B65H1

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The AOTS40B65H1 from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.9 to 2.63 V, DC Collector Current 40 to 80 A, Peak Collector Current 120 A, Junction Temperature -55 to 175 Degree C. More details for AOTS40B65H1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOTS40B65H1
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.63 V
  • DC Collector Current
    40 to 80 A
  • Peak Collector Current
    120 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    150 to 300 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • Industry
    Industrial, Commercial
  • Applications
    Power factor correction, UPS & Solar Inverters, Very High Switching Frequency Applications, Welding Machines
  • RoHS Compliant
    Yes

Technical Documents
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