The MG7405WZ from ROHM Semiconductor is a Field Stop Trench IGBT that is ideal for voltage-resonance inverter and induction heating applications. It has a collector-emitter breakdown voltage of over 1800 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 2.2 V. This IGBT has a collector current of 40 A and a gate-emitter leakage current of ±200 nA. It utilizes trench light punch-through (LPT) technology. This IGBT offers high-speed switching, low switching loss, and supports soft switching. It is available as a bare die that measures 8.2 x 6.0 mm.