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DIM1200ASM45-TF001

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DIM1200ASM45-TF001 Image

The DIM1200ASM45-TF001 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.5 to 4.4 V, DC Collector Current 1200 A, Peak Collector Current 2400 A, DC Forward Current 1200 A. More details for DIM1200ASM45-TF001 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM1200ASM45-TF001
  • Manufacturer
    Dynex Semiconductor
  • Description
    4500 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Triple
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.5 to 4.4 V
  • DC Collector Current
    1200 A
  • Peak Collector Current
    2400 A
  • DC Forward Current
    1200 A
  • Peak Forward Current
    2400 A
  • Junction Temperature
    125 Degree C
  • Gate Emitter Leakage Current
    1uA
  • Collector Emitter Voltage
    4500 V
  • Power Dissipation
    12500 W
  • Package Type
    Module
  • Applications
    High Reliability Inverters, Motor Controllers, Traction drives, Choppers

Technical Documents
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