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2MBI1200VT-170E

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2MBI1200VT-170E Image

The 2MBI1200VT-170E from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.77 V, DC Collector Current 1200 to 2400 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 1.6 uA. More details for 2MBI1200VT-170E can be seen below.

Product Specifications

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Product Details

  • Part Number
    2MBI1200VT-170E
  • Manufacturer
    Fuji Electric
  • Description
    1700 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.77 V
  • DC Collector Current
    1200 to 2400 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1.6 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    7040 W
  • Package
    M278
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems, Industrial machines, Welding machines
  • RoHS Compliant
    Yes

Technical Documents
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