GD75HFX170C1S

IGBT by StarPower (277 more products)

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

The GD75HFX170C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.35 V, DC Collector Current 139 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD75HFX170C1S can be seen below.

Product Specifications

View similar products

Product Details

Part Number
GD75HFX170C1S
Manufacturer
StarPower
Description
1700 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.85 to 2.35 V
DC Collector Current

139 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

559 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply