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FGW30N120H

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FGW30N120H Image

The FGW30N120H from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.34 V, DC Collector Current 30 to 53 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.2 uA. More details for FGW30N120H can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGW30N120H
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.34 V
  • DC Collector Current
    30 to 53 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    260 W
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Uniterruptible power supply systems, Power condiotioner, Power factor correction circuit
  • RoHS Compliant
    Yes

Technical Documents
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