1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Fuji Electric
  6. FGZ50N65WE

FGZ50N65WE

Download Datasheet Request Quote

Note : Your request will be directed to Fuji Electric.

FGZ50N65WE Image

The FGZ50N65WE from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.2 V, DC Collector Current 50 to 70 A, DC Forward Current 50 to 73 A, Junction Temperature -40 to 175 Degree C. More details for FGZ50N65WE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FGZ50N65WE
  • Manufacturer
    Fuji Electric
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.2 V
  • DC Collector Current
    50 to 70 A
  • DC Forward Current
    50 to 73 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    170 to 330 A
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Inverter, Welding matchines, Uniterruptible power supply, PV Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products