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AIKB20N60CT

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AIKB20N60CT Image

The AIKB20N60CT from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 2.05 V, DC Collector Current 20 to 40 V, DC Forward Current 20 to 40 A, Gate Emitter Leakage Current 0.1 uA. More details for AIKB20N60CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AIKB20N60CT
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 2.05 V
  • DC Collector Current
    20 to 40 V
  • DC Forward Current
    20 to 40 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    156 W
  • Package
    PG-TO263-3
  • Package Type
    Through Hole
  • Applications
    Maininverter, Climatec ompressor, PTC heater, Motordrives
  • RoHS Compliant
    Yes

Technical Documents
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