The AIKQ120N75CP2 from Infineon Technologies is an Automotive Qualified IGBT that consists of three fast soft recovery emitter-controlled diodes. It has a collector-emitter voltage of less than 750 V, a saturated collector-emitter voltage of 1.3 V, and a gate-emitter threshold voltage of 5.8 V. This IGBT has a DC collector current of up to 150 A and a gate-emitter leakage current of less than 100 nA. It is suitable for 470 V battery systems and offers smooth switching characteristics. This IGBT has a low EMI signature and gate charge, and can self limit the current under short circuit conditions. It has a positive thermal coefficient that ensures an easy paralleling operation, system flexibility, and power scalability. This RoHS compliant IGBT is available as a through-hole package that measures 15.70 x 40.7 mm and is ideal for use in xEV traction inverters, DC-link discharge switches, and automotive auxiliary drives.