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AUIRGDC0250

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AUIRGDC0250 Image

The AUIRGDC0250 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.2 to 1.8 V, DC Collector Current 81 to 141 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for AUIRGDC0250 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRGDC0250
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.2 to 1.8 V
  • DC Collector Current
    81 to 141 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    217 to 543 W
  • Package
    Super-220 (TO-273)
  • Package Type
    Through Hole
  • Applications
    PTC Heater, Relay Replacement
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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