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AUIRGP35B60PD-E

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AUIRGP35B60PD-E Image

The AUIRGP35B60PD-E from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 3.45 V, DC Collector Current 34 to 60 A, DC Forward Current 15 to 40 A, Junction Temperature -55 to 175 Degree C. More details for AUIRGP35B60PD-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRGP35B60PD-E
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 3.45 V
  • DC Collector Current
    34 to 60 A
  • DC Forward Current
    15 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    123 to 308 W
  • Package
    TO247COPAK
  • Package Type
    Through Hole
  • Applications
    PFC and ZVS SMPS Circuits, DC/DC Converter Charger
  • RoHS Compliant
    Yes

Technical Documents
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