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FS660R08A6P2FLB

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The FS660R08A6P2FLB from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.10 to 1.35 V, DC Collector Current 660 A, Peak Collector Current 1320 A, DC Forward Current 660 A. More details for FS660R08A6P2FLB can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS660R08A6P2FLB
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.10 to 1.35 V
  • DC Collector Current
    660 A
  • Peak Collector Current
    1320 A
  • DC Forward Current
    660 A
  • Peak Forward Current
    1320 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    1053 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles (H)EV, Commercial Agriculture Vehicles, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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