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FS950R08A6P2LB

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FS950R08A6P2LB Image

The FS950R08A6P2LB from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.10 to 1.55 V, DC Collector Current 950 A, Peak Collector Current 1900 A, DC Forward Current 950 A. More details for FS950R08A6P2LB can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS950R08A6P2LB
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Hex Switch IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.10 to 1.55 V
  • DC Collector Current
    950 A
  • Peak Collector Current
    1900 A
  • DC Forward Current
    950 A
  • Peak Forward Current
    1900 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    870 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles (H)EV, Commercial Agriculture Vehicles, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
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