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IGB50N65H5

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IGB50N65H5 Image

The IGB50N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 53.7 to 80 V, Gate Emitter Leakage Current 0.1 uA, Operating Temperature -40 to 175 Degree C. More details for IGB50N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGB50N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    53.7 to 80 V
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    135 to 270 W
  • Package
    PG-TO263-3
  • Package Type
    Through Hole
  • Applications
    Energy Generation -Solar String Inverter -Solar Micro Inverter, Industrial Power Supplies -Industrial SMPS -Industrial UPS, Metal Treatment -Welding, Energy Distribution -Energy Storage, Infrastructure–Charge -Charger
  • RoHS Compliant
    Yes

Technical Documents
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