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IGD15N65T6

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IGD15N65T6 Image

The IGD15N65T6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 18 to 30 V, Peak Collector Current 18 to 30 A, Junction Temperature 175 Degree C. More details for IGD15N65T6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGD15N65T6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    18 to 30 V
  • Peak Collector Current
    18 to 30 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    50 to 100 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Drives, GPD(general purpose drives), Major home appliances, Air conditioning, Other major home appliances Small home appliances, Other small home appliances
  • RoHS Compliant
    Yes

Technical Documents
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