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IGW08T120

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IGW08T120 Image

The IGW08T120 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.2 V, DC Collector Current 8 to 16 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGW08T120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW08T120
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.2 V
  • DC Collector Current
    8 to 16 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    70 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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