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IGW60T120

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IGW60T120 Image

The IGW60T120 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.4 V, DC Collector Current 60 to 100 V, Gate Emitter Leakage Current 0.6 uA, Operating Temperature -40 to 150 Degree C. More details for IGW60T120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW60T120
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.4 V
  • DC Collector Current
    60 to 100 V
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    375 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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