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IGZ100N65H5

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IGZ100N65H5 Image

The IGZ100N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 101 to 161 V, Peak Collector Current 101 to 161 A, Junction Temperature 175 Degree C. More details for IGZ100N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGZ100N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    101 to 161 V
  • Peak Collector Current
    101 to 161 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    268 to 536 W
  • Package
    TO-247-4
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, welding converters, converter swith high switching frequency, Solar string inverters
  • RoHS Compliant
    Yes

Technical Documents
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