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IHW50N65R5

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IHW50N65R5 Image

The IHW50N65R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 50 to 80 V, DC Forward Current 22 to 37 A, Gate Emitter Leakage Current 0.1 uA. More details for IHW50N65R5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW50N65R5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    50 to 80 V
  • DC Forward Current
    22 to 37 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    141 to 282 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Induction cooking, Inverterized microwave ovens, Resonant converters
  • RoHS Compliant
    Yes

Technical Documents
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