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IKB20N60T

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IKB20N60T Image

The IKB20N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 2.05 V, DC Collector Current 15 to 30 V, Peak Collector Current 28 to 41 A, DC Forward Current 28 to 41 A. More details for IKB20N60T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKB20N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 2.05 V
  • DC Collector Current
    15 to 30 V
  • Peak Collector Current
    28 to 41 A
  • DC Forward Current
    28 to 41 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    166 W
  • Package
    D2PAK (TO-263-3)
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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