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IKD04N60RF

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IKD04N60RF Image

The IKD04N60RF from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.20 to 2.50 V, DC Collector Current 4 to 8 A, DC Forward Current 5.9 to 9.7 A, Junction Temperature 175 Degree C. More details for IKD04N60RF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKD04N60RF
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.20 to 2.50 V
  • DC Collector Current
    4 to 8 A
  • DC Forward Current
    5.9 to 9.7 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    75 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Compressors, Pumps, Fans
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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