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IKFW40N65DH5

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IKFW40N65DH5 Image

The IKFW40N65DH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.80 to 2.25 V, DC Collector Current 52 to 52 V, DC Forward Current 29 to 37 A, Gate Emitter Leakage Current 0.1 uA. More details for IKFW40N65DH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW40N65DH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.80 to 2.25 V
  • DC Collector Current
    52 to 52 V
  • DC Forward Current
    29 to 37 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    78 to 106 W
  • Package
    PG-HSIP247-3-1
  • Package Type
    Through Hole
  • Applications
    Residential and Commercial Aircon PFC, Welding converters, Mid to high range switching frequency converters
  • Qualification
    AECQ101
  • RoHS Compliant
    Yes

Technical Documents
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