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IKFW50N60DH3E

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IKFW50N60DH3E Image

The IKFW50N60DH3E from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2.20 to 2.80 V, DC Collector Current 40 V, DC Forward Current 29 to 40 A, Gate Emitter Leakage Current 0.1 uA. More details for IKFW50N60DH3E can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW50N60DH3E
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2.20 to 2.80 V
  • DC Collector Current
    40 V
  • DC Forward Current
    29 to 40 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    95 to 130 W
  • Package
    PG-TO247-3-AI
  • Package Type
    Through Hole
  • Applications
    Air Conditioning PFC, General Purpose Drives, Servo Drives
  • RoHS Compliant
    Yes

Technical Documents
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