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IKFW60N60DH3E

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IKFW60N60DH3E Image

The IKFW60N60DH3E from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2.20 to 2.80 V, DC Collector Current 44 V, DC Forward Current 32 to A, Gate Emitter Leakage Current 0.1 uA. More details for IKFW60N60DH3E can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW60N60DH3E
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2.20 to 2.80 V
  • DC Collector Current
    44 V
  • DC Forward Current
    32 to A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    104 to 141 W
  • Package
    PG-TO247-3-AI
  • Package Type
    Through Hole
  • Applications
    Air Conditioning PFC, General Purpose Drives, Servo Drives
  • Qualification
    AECQ101
  • RoHS Compliant
    Yes

Technical Documents
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