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IKFW75N65EH5

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IKFW75N65EH5 Image

The IKFW75N65EH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 104 to 104 V, DC Forward Current 74 to 80 A, Gate Emitter Leakage Current 0.1 uA. More details for IKFW75N65EH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW75N65EH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    104 to 104 V
  • DC Forward Current
    74 to 80 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    109 to 148 W
  • Package
    PG-HSIP247-3-1
  • Package Type
    Through Hole
  • Applications
    Residential and Commercial Aircon PFC, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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