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IKFW60N60EH3

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IKFW60N60EH3 Image

The IKFW60N60EH3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.85 to 2.30 V, DC Collector Current 63 A, DC Forward Current 60 to 80 A, Junction Temperature 175 Degree C. More details for IKFW60N60EH3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW60N60EH3
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.30 V
  • DC Collector Current
    63 A
  • DC Forward Current
    60 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    120 to 164 W
  • Package
    PG-TO247-3-AI
  • Package Type
    Through Hole
  • Applications
    General Purpose Drives(GPD), Servo Drives, Industrial SMPS, Industrial UPS, Charger, Welding, Solar String Inverter
  • RoHS Compliant
    Yes

Technical Documents
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