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IKFW75N65ES5

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The IKFW75N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 109 V, Peak Collector Current 75 to 109 A, DC Forward Current 74 to 80 A. More details for IKFW75N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW75N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    109 V
  • Peak Collector Current
    75 to 109 A
  • DC Forward Current
    74 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    109 to 148 W
  • Package
    PG-HSIP247-3-1
  • Package Type
    Through Hole
  • Applications
    Resonant converters, Uninterruptible power supplies, welding converters, converter swith high switching frequency, Solar string inverters
  • RoHS Compliant
    Yes

Technical Documents
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