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IKP15N65F5

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IKP15N65F5 Image

The IKP15N65F5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.60 to 2.10 V, DC Collector Current 18 to 30 V, DC Forward Current 12 to 2 A, Gate Emitter Leakage Current 0.1 uA. More details for IKP15N65F5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKP15N65F5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.10 V
  • DC Collector Current
    18 to 30 V
  • DC Forward Current
    12 to 2 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    52.5 to 105 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • Qualification
    AECQ101
  • RoHS Compliant
    Yes

Technical Documents
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