1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKP15N65H5

IKP15N65H5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKP15N65H5 Image

The IKP15N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 18 to 30 V, DC Forward Current 12 to 20 A, Gate Emitter Leakage Current 0.1 uA. More details for IKP15N65H5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKP15N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    18 to 30 V
  • DC Forward Current
    12 to 20 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    52 to 105 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products