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IKP28N65ES5

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IKP28N65ES5 Image

The IKP28N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 28 to 38 V, DC Forward Current 27 to 40 A, Gate Emitter Leakage Current 0.1 uA. More details for IKP28N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKP28N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    28 to 38 V
  • DC Forward Current
    27 to 40 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    65 to 130 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Drives, Industrial Power Supplies -Industrial SMPS -Industrial UPS, Metal Treatment -Welding, Energy Distribution -EnergyStorage, Infrastructur
  • RoHS Compliant
    Yes

Technical Documents
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