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IKQ40N120CH3

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IKQ40N120CH3 Image

The IKQ40N120CH3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2 to 2.50 V, DC Collector Current 40 to 80 V, DC Forward Current 40 to 80 A, Gate Emitter Leakage Current 0.1 uA. More details for IKQ40N120CH3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKQ40N120CH3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2 to 2.50 V
  • DC Collector Current
    40 to 80 V
  • DC Forward Current
    40 to 80 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    136 to 500 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Industrial UPS, Charger, Energy storage, Three-level Solar String Inverter, Welding
  • Qualification
    AECQ101
  • RoHS Compliant
    Yes

Technical Documents
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