1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKQ50N120CH3

IKQ50N120CH3

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKQ50N120CH3 Image

The IKQ50N120CH3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2 to 2.50 V, DC Collector Current 50 to 100 V, DC Forward Current 50 to 100 A, Gate Emitter Leakage Current 0.1 uA. More details for IKQ50N120CH3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKQ50N120CH3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2 to 2.50 V
  • DC Collector Current
    50 to 100 V
  • DC Forward Current
    50 to 100 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    173 to 652 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Industrial UPS, Charger, Energy Storage, Three-level Solar String Inverter
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products