1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKQ75N120CS6

IKQ75N120CS6

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKQ75N120CS6 Image

The IKQ75N120CS6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 25 V, Saturated Collector Emitter Voltage 1.85 to 2.15 V, DC Collector Current 75 to 150 V, Peak Collector Current 75 to 150 A, DC Forward Current 75 to 150 A. More details for IKQ75N120CS6 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKQ75N120CS6
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 25 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.15 V
  • DC Collector Current
    75 to 150 V
  • Peak Collector Current
    75 to 150 A
  • DC Forward Current
    75 to 150 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    440 to 880 W
  • Package
    TO-247PLUS-3
  • Package Type
    Through Hole
  • Applications
    Industrial UPS, Industrial SMPS, Energy Storage, Charger, Welding
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products