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IKW15N120BH6

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IKW15N120BH6 Image

The IKW15N120BH6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 25 V, Saturated Collector Emitter Voltage 1.90 to 2.35 V, DC Collector Current 15 to 30 V, Peak Collector Current 15 to 30 A, DC Forward Current 7.5 to 15 A. More details for IKW15N120BH6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW15N120BH6
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 25 V
  • Saturated Collector Emitter Voltage
    1.90 to 2.35 V
  • DC Collector Current
    15 to 30 V
  • Peak Collector Current
    15 to 30 A
  • DC Forward Current
    7.5 to 15 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    100 to 200 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Industrial UPS, Industrial SMPS, Energy Storage, Charger, Welding
  • RoHS Compliant
    Yes

Technical Documents
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