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IKW15T120

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IKW15T120 Image

The IKW15T120 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.2 V, DC Collector Current 15 to 30 V, DC Forward Current 15 to 30 A, Gate Emitter Leakage Current 0.1 uA. More details for IKW15T120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW15T120
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.2 V
  • DC Collector Current
    15 to 30 V
  • DC Forward Current
    15 to 30 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    110 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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