1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKW25N120T2

IKW25N120T2

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKW25N120T2 Image

The IKW25N120T2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.2 V, DC Collector Current 25 to 50 V, DC Forward Current 25 to 40 A, Gate Emitter Leakage Current 0.2 uA. More details for IKW25N120T2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKW25N120T2
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.2 V
  • DC Collector Current
    25 to 50 V
  • DC Forward Current
    25 to 40 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    349 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products