1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKW40N120T2

IKW40N120T2

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKW40N120T2 Image

The IKW40N120T2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.25 V, DC Collector Current 40 to 75 V, DC Forward Current 40 to 75 A, Junction Temperature 175 Degree C. More details for IKW40N120T2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKW40N120T2
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.25 V
  • DC Collector Current
    40 to 75 V
  • DC Forward Current
    40 to 75 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    480 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products