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IKW75N65EH5

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IKW75N65EH5 Image

The IKW75N65EH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 75 to 90 V, DC Forward Current 75 to 90 A, Gate Emitter Leakage Current 0.1 uA. More details for IKW75N65EH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW75N65EH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    75 to 90 V
  • DC Forward Current
    75 to 90 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    198 to 395 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Uninterruptible, power, supplies, Welding coverters, mid to high range switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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