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IKW40N60DTP

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IKW40N60DTP Image

The IKW40N60DTP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.60 to 1.94 V, DC Collector Current 48 to 67 V, DC Forward Current 35 to 58 A, Gate Emitter Leakage Current 0.1 uA. More details for IKW40N60DTP can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW40N60DTP
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.60 to 1.94 V
  • DC Collector Current
    48 to 67 V
  • DC Forward Current
    35 to 58 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    123 to 246 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    drives, solarinverters, uninterruptible power supplies, converters with medium switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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