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IKW50N60DTP

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The IKW50N60DTP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.60 to 1.94 V, DC Collector Current 61 to 80 V, Gate Emitter Leakage Current 0.1 uA, Operating Temperature -40 to 175 Degree C. More details for IKW50N60DTP can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW50N60DTP
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.60 to 1.94 V
  • DC Collector Current
    61 to 80 V
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    159.6 to 319.2 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    drives, solar inverters, uninterruptible power supplies, converter swith medium switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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