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IKW50N65EH5

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IKW50N65EH5 Image

The IKW50N65EH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 50 to 80 V, Peak Collector Current 50 to 80 A, DC Forward Current 50 to 80 A. More details for IKW50N65EH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW50N65EH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    50 to 80 V
  • Peak Collector Current
    50 to 80 A
  • DC Forward Current
    50 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    138 to 275 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, welding converters, converter swith high switching frequency, Solar converters
  • RoHS Compliant
    Yes

Technical Documents
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