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IKW50N65ET7

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IKW50N65ET7 Image

The IKW50N65ET7 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.65 V, DC Collector Current 59.7 to 80 V, DC Forward Current 50 to 80 A, Gate Emitter Leakage Current 0.1 uA. More details for IKW50N65ET7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW50N65ET7
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.65 V
  • DC Collector Current
    59.7 to 80 V
  • DC Forward Current
    50 to 80 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    136 to 276 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Drive-Servo-GPD, IndustrialPowerSupplies-Industrial UPS-Residential UPS, EnergyGeneration-SolarCentralInverter-SolarStringInverter-SolarPump
  • RoHS Compliant
    Yes

Technical Documents
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