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IKY50N120CH3

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IKY50N120CH3 Image

The IKY50N120CH3 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2 to 2.50 V, DC Collector Current 50 to 100 A, Peak Collector Current 200 A, DC Forward Current 50 to 100 A. More details for IKY50N120CH3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKY50N120CH3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    2 to 2.50 V
  • DC Collector Current
    50 to 100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    50 to 100 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    173 to 652 W
  • Package
    PG-TO247-4-2
  • Package Type
    Through Hole
  • Applications
    Industrial UPS, Charger, Energy Storage, Three-level Solar String Inverter
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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