1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKZ50N65EH5

IKZ50N65EH5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKZ50N65EH5 Image

The IKZ50N65EH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 54 to 85 V, DC Forward Current 75 to 95 A, Gate Emitter Leakage Current 0.1 uA. More details for IKZ50N65EH5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKZ50N65EH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    54 to 85 V
  • DC Forward Current
    75 to 95 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    136 to 273 W
  • Package
    TO-247-4
  • Package Type
    Through Hole
  • Applications
    Uninterruptible, power, supplies, Welding coverters, mid to high range switching frequency converters, solar string inverters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products