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IKZ50N65ES5

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IKZ50N65ES5 Image

The IKZ50N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 60.5 to 200 V, Peak Collector Current 60.5 to 80 A, DC Forward Current 60.5 to 80 A. More details for IKZ50N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKZ50N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    60.5 to 200 V
  • Peak Collector Current
    60.5 to 80 A
  • DC Forward Current
    60.5 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    137 to 274 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Industrial UPS, Industrial SMPS, Energy Storage, Charger, Welding
  • RoHS Compliant
    Yes

Technical Documents
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