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IKZ75N65EH5

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IKZ75N65EH5 Image

The IKZ75N65EH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 75 to 90 V, DC Forward Current 85 to 95 A, Gate Emitter Leakage Current 0.1 uA. More details for IKZ75N65EH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKZ75N65EH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    75 to 90 V
  • DC Forward Current
    85 to 95 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    197 to 395 W
  • Package
    TO-247-4
  • Package Type
    Through Hole
  • Applications
    Uninterruptible, power, supplies, Welding coverters, mid to high range switching frequency, Solar stringi nverters
  • RoHS Compliant
    Yes

Technical Documents
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