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MIW50N65H

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The MIW50N65H from Micro Commercial Components is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 1.95 V, DC Collector Current 50 to 80 A, DC Forward Current 20 to 40 A, Junction Temperature -55 to 175 Degree C. More details for MIW50N65H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MIW50N65H
  • Manufacturer
    Micro Commercial Components
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 1.95 V
  • DC Collector Current
    50 to 80 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    100 to 250 W
  • Package
    TO 247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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