MIW75N65F

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MIW75N65F Image

The MIW75N65 from Micro Commercial Components is a Trench and Field Stop IGBT. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 5.05 V, and a saturated collector-emitter voltage of 1.65 V. This UL 94 V-0-rated IGBT has a continuous collector current of up to 85 A and a peak collector current of less than 300 A. It delivers high-speed smooth switching and is capable of both hard and soft switching. 

This RoHS-compliant IGBT has a positive temperature coefficient which increases the on-state voltage drop(VCE), limiting power dissipation and offering better thermal stability. It is available in a through-hole package that measures 39.32 x 15.50 mm.

Product Specifications

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Product Details

  • Part Number
    MIW75N65F
  • Manufacturer
    Micro Commercial Components
  • Description
    650 V Trench and Field Stop IGBT

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.15 V
  • DC Collector Current
    80 to 85 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    395 W
  • Package
    TO-247AB
  • Package Type
    Through Hole
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes

Technical Documents

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