Note : Your request will be directed to onsemi.
The AFGHL25T120RHD from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2 V, DC Collector Current 25 A, Peak Collector Current 100 A, DC Forward Current 25 A. More details for AFGHL25T120RHD can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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