The AFGHL50T65RQDN from onsemi is a Field Stop Trench IGBT that is designed for automotive applications. It has a collector-emitter voltage of 650 V and a gate-emitter voltage of ±20 V. This AEC Q101 qualified IGBT has a DC collector current of 78 A, a DC forward current of 54 A, and a gate-emitter leakage current of ±400 nA. It has a power dissipation of 346 W. It is based on field stop IGBT technology and offers low conduction and switching losses. This RoHS compliant IGBT has low saturation voltage and a positive temperature coefficient for easy parallel operation. It is available in a through-hole package and is ideal for solar inverter, UPS, welder, telecom, ESS, and PFC applications.